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| www..com 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM * Application for Ultra-compact ECM 0.220.05 1.20.05 0.80.05 0.320.05 3 2 0.10.05 Unit: mm 0.45 0.45 1.40.05 0.90.1 Absolute Maximum Ratings (Ta=25C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 -55~125 Unit V mA mW C C 1 0.3950.03 TESM3 IDSS CLASSIFICATION A-Rank 140~240A B-Rank 210~350A 1.Drain 2.Source 3.Gate JEDEC JEITA TOSHIBA 2-1R1A Weight: 2.2mg (typ.) Marking Equivalent Circuit D Type Name 9 IDSS Classification Symbol A :A -Rank B :B-Rank G S 1 2007-01-08 www..com 2SK3857TK Electrical Characteristics (Ta=25C) Characteristic Drain Current Drain Current Gate-Source Cut-off Voltage Forward transfer admittance Gate-Drain Voltage Input capacitance Voltage Gain Delta Voltage Gain Delta Voltage Gain Noise Voltage Total Harmonic Distortion Time Output Stability Symbol IDSS ID VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2.2k,Cg = 5pF Test Condition Min 140 -0.1 0.9 -20 -3.0 Typ. 1.3 3.5 -0.5 0 -0.8 25 0.7 100 Max 350 370 -1.0 -1 -2 55 200 Unit A A V mS V pF dB dB dB mV % ms VGS(OFF) VDS = 2 V, ID = 1A |Yfs| VDS = 2 V,VGS = 0V V(BR)GDO IG=-10A Ciss Gv DGv(f) DGv(V) VN THD tos VDS = 2 V, VGS = 0, f = 1 MHz VDD = 2V, RL= 2.2k,Cg = 5pF, f = 1kHz,vin=100mV VDD = 2V, RL= 2.2k,Cg = 5pF,f = 1kHz to 100Hz,vin=100mV VDD = 2V to 1.5V, RL= 2.2k,Cg = 5pF,f = 1kHz, vin=100mV VDD = 2V, RL= 1k,Cg = 10pF,Gv=80dB, A-Curve Filter VDD = 2V, RL= 2.2k,Cg = 5pF, f = 1kHz, vin=50mV VDD = 2V, RL= 2.2k,Cg = 5pF Time Output Stability Test Method a) TEST CIRCUIT b) TEST SIGNAL VDD 2.2k VDD=2.0V Vout 0V Vout VDD-ID*RL 5pF 0V tos 90% 2V 50% 2 2007-01-08 www..com 2SK3857TK ID - VGS 600 VDS=2V Common Source Ta = 25 C ID - VGS 600 VDS=2V Common Source (A) (A) 500 500 Drain Current ID Drain Current ID 400 400 Ta=85 300 Ta=25 200 Ta=-40 100 300 IDSS=330A 200 100 IDSS=150A 0 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -1.0 -0.8 -0.6 -0.4 -0.2 0 Gate - Source voltage VGS (V) Gate - Source voltage VGS (V) ID - VDS 600 Common Source Ta = 25 C 500 500 600 Common Source Ta = 25 C ID - VDS IDSS=330A + 0.1 V 400 + 0.05 V VGS = 0 V - 0.05 V 200 - 0.1 V (A) Drain Current ID Drain Current ID 400 IDSS=170A (A) 300 + 0.1 V + 0.05 V VGS = 0 V 100 - 0.05 V - 0.1 V 0 0 300 200 100 1.0 0 2.0 0 1.0 2.0 Drain - Source voltage VDS (V) Drain - Source voltage VDS (V) |Yfs| - IDSS 3 VGS(OFF) - IDSS -500 Forward transfer admittance |Yfs| (mS) Gate-Source Cut-off Voltage VGS(OFF) (V ) -400 2 -300 -200 VGS(OFF):VDS=2V ID = 1A -100 IDSS:VDS=2V VGS=0V Common Source Ta = 25 C 0 100 200 300 400 500 600 1 |Yfs|:VDS=2V VGS=0V IDSS: VDS=2V VGS=0V Common Source Ta = 25 C 100 200 300 400 500 600 0 0 Drain Current IDSS (A) Drain Current IDSS (A) 3 2007-01-08 www..com 2SK3857TK DGv(V)- IDSS -3.0 Gv- IDSS 1 DGv(V) (dB) -2.5 Voltage Gain Gv (dB) 0 DGv:VDD=2V to 1.5V Cg=5pF RL= 2.2k, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C -2.0 -1 Gv:VDD=2V Cg=5pF RL= 2.2k, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C 0 100 200 300 400 500 600 -2 Delta Voltage Gain -1.5 -1.0 -3 -0.5 -4 0 0 100 200 300 400 500 600 Drain Current IDSS (A) Drain Current IDSS (A) Gv - Cg 10 60 Common Source Ta = 25C VN - IDSS 5 Voltage Gain Gv (dB) IDSS=350A IDSS=170A VN (mV) Noise Voltage 50 0 -5 40 30 VN:VDD=2V Cg=10pF RL= 1k f=1kHz 80dB AMP A-Curve Filter IDSS: VDS=2V VGS=0V 0 100 200 300 400 500 600 -10 -15 VDD=2V Cg=5pF RL= 2.2k, f=1kHz vin=100mV Common Source Ta = 25C 0 2 4 6 8 10 20 10 -20 0 Electret Capacitance Cg (pF) Drain Current IDSS (A) THD- IDSS 2.0 THD:VDD=2V Cg=5pF RL= 2.2k f=1kHz vin=50mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C 10 Ciss - VDS Total Harmonic Distortion THD (%) 1.5 Ciss (pF) Input capacitance 5 1.0 3 0.5 0 0 100 200 300 400 500 600 VGS=0V f=1kHz Common Source Ta = 25C 1 1 5 10 Drain Current IDSS (A) Drain - Source voltage VDS (V) 4 2007-01-08 www..com 2SK3857TK 5 2007-01-08 |
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